roduct*., one. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 IRF130 repetitive avalanche and dv/dt rated hexfet?transistors product summary part number IRF130 bvdss 100v rds(on) 0.1 8fl id 14a features: ? repetitive avalanche ratings ? dynamic dv/dt rating ? hermetically sealed ? simple drive requirements ? ease of paralleling absolute maximum ratings id @ vgs =ov, tc = 25c id @ vgs = ov, tc = iooc idm pd @ tc = 25c vgs eas iar ear dv/dt tj tstg parameter continuous drain current continuous drain current pulsed drain current cd max, power dissipation linear derating factor gate-to-source voltage single pulse avalanche energy @ avalanche current (d repetitive avalanche energy cd peak diode recovery dv/dt (d operating junction storage temperature range lead temperature weight 14 9.0 56 75 0.60 20 75 14 7.5 5.5 -55 to 150 300 (0.063 in. (1.6mm) from case for 10s) 1 1.5(typical) units a w w/c v mj a ml v/ns c g nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
IRF130 electrical characteristics @ tj = 25c (unless otherwise specified) bvdss abvoss/atj rds(on) vgs(th) gfs idss igss igss qg qgs qsd td(on) tr ?dfoff) tf ls + ld qss cqss crss parameter drain-to-source breakdown voltage temperature coefficient of breakdown voltage static drain-to-source on-state resistance gate threshold voltage forward transconductance zero gate voltage drain current gate-to-source leakage forward gate-to-source leakage reverse total gate charge gate-to-source charge gate-to-drain ('miller') charge turn-on delay time rise time turn-off delay time fall time total inductance input capacitance output capacitance reverse transfer capacitance min 100 ? ? ? 2.0 4.6 ? ? ? ? 12 2.5 5.0 ? ? ? -? ? ? ? typ ? 0.13 ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 6.1 650 250 44 max ? ? 0.18 0.21 4.0 ? 25 250 100 -100 35 10 15 35 80 60 45 ? ? units v v/c q v s 15v, lds = 9.0a? vds=80v,vgs=ov vds = sov vgs = ov,tj= i25c vgs = 2ov vgs = -2ov vgs =10v, id=14a vds = 5ov vdd =sov, id =i4a, rg =7.sn measured from drain lead (6mm/0.25in, from package) to source lead (6mm/0.25in. from package) vgs = ov, vds = 25v f = l.omhz source-drain diode ratings and characteristics is ism vsd trr qrr ton parameter continuous source current (body diode) pulse source current (body diode) 3) diode forward voltage reverse recovery time reverse recovery charge forward turn-on time min ? ? ? ? typ ? ? ? ? max 14 56 1.5 300 3.0 units a v ns uc test conditions tj = 25c, is = 14a, vgs = ov ? tj = 25c, if = 14a, di/dt < looa/jis vdd ^ sov ? intrinsic turn-on time is negligible. turn-on speed is substantially controlled by ls + lr> thermal resistance rthjc rthja parameter junction to case junction to ambient min ? ? typ ? ? max 1.67 30 units c/w test conditions typical socket mount
26.6 max ^ 4.2 9.0 max. f r t to3 package.
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